Plasma Atomic Layer Deposition Research Articles

Growth of conformal TiN thin film with low resistivity and impurity via hollow cathode plasma atomic layer deposition

Copper has been used as an interconnect material in integrated semiconductor devices because of its excellent conductivity, mechanical strength, and electromigration resistance. Introducing a diffusion barrier layer using transition metals such as Ti, Ta, W, Mo, and their nitrides can effectively prevent copper diffusion into the transistor region. TiN is widely used as the diffusion barrier. Plasma-enhanced atomic layer deposition (PEALD), which uses plasma to activate molecular reactions, can be used to fabricate high-quality thin films at lower temperatures than thermal atomic layer deposition. However, its high electrical resistivity and poor step coverage are disadvantageous for its adoption in highly scaled three-dimensional structures. In this study, TiN thin films were fabricated using PEALD with a hollow cathode plasma (HCP) source. The fabricated TiN exhibited a high density (5.29 g/cm3), which was very close to the theoretical density of TiN. Moreover, it has low electrical resistivity (132 μΩ cm) and excellent step coverage (>98%) in a trench pattern with a high aspect ratio of 32:1. These results suggest the possible application of the PEALD of TiN films using HCP sources in semiconductor device manufacturing.

Stress Relaxation of Extremely-Thin-Body Ge-on-Insulator p-Type Metal-Oxide-Semiconductor Field-Effect Transistor Along and Observed By Oil-Immersion Raman Spectroscopy

Background and purpose Strain techniques and channel materials with high carrier mobility are the principal technology boosters for the realization of high-performance logic devices composed of group IV semiconductors such as silicon (Si). In particular, strain engineering plays an important role in improving the performance of metal-oxide semiconductor field-effect transistors (MOSFETs) from the viewpoint of reducing the effective carrier mass. It is important to evaluate the stress relaxation in group IV semiconductor devices for the optimization of the carrier mobility and the device structure. In this paper, we demonstrated the stress evaluation of extremely-thin-body Ge-on-insulator (ETB GOI) p-type MOSFET along the <110> and <100> longitudinal directions by oil-immersion Raman spectroscopy with the high-numerical-aperture (high-NA) lens to realize precise evaluation of strain states in the Ge channels. Experiments Biaxially-strained (001) GOI layer was prepared by applying optimized Ge condensation technique on epitaxially-grown Si/Si0.75Ge0.25/Si-on-insulator substrates with 4-hour slow cooling [1, 2]. After the removal of the thermal oxide, narrow channel patterning was performed by electron-beam (EB) lithography. GOI channel was further thinned down by the cyclic digital etching process (plasma oxidation and wet etching). Surface passivation process was then immediately performed to fabricate GeO x and Al2O3 by plasma oxidation and atomic layer deposition at 300oC, respectively. The source-drain regions were formed with EB evaporated Ni through a lift-off process and Al deposition was performed as the back gate electrode.We used the Raman spectrometer with spectrograph focal length of 2,000 mm. The numbers of grating grooves were 2,400 mm-1 and a visible laser was used as the incident excitation light source whose wavelength was 532 nm. To realize anisotropic stress evaluation assuming the channel region of the ETB GOI MOSFET, we used a high-NA immersion lens for the selective excitation of both LO and TO phonon modes [3]. The high-NA and refractive index n of the oil were approximately 1.4 and 1.5, respectively. Using a high-NA immersion lens, a z-polarized light component can be effectively obtained owing to the aperture angle. Therefore, TO phonons can be excited on the basis of Raman selection rules for (001)-oriented GOI [3, 4]. Results and discussion Figure 1 shows the channel width dependence of the anisotropic biaxial stress of ETB GOI MOSFET along the <100> longitudinal direction obtained by the oil-immersion Raman spectra. Anisotropic biaxial compressive stress at the GOI channel width direction of the GOI channels was observed even when the GOI channel width is wide (GOI channel width ~ 630 nm). The stress along the GOI channel length (the <100> longitudinal direction) is relatively high. These results are clearly different from the stress relaxation in the ETB GOI MOSFET along the <110> longitudinal direction. In previous studies, a clear stress relaxation at the GOI channel width direction was observed as the GOI channel width becomes narrower of the ETB GOI MOSFET along the <110> longitudinal direction (from channel width ~ 200 nm) [5]. The results observed in this study are generally well correlated with the results obtained in strain relaxation measurements of carbon-doped Si nanowires along <100> by X-ray diffraction with synchrotron radiation [6]. The difference in the strain relaxation mechanism depending on the GOI channel direction may affect the electrical properties, and we consider that it is useful to be physical elucidation of the carrier mobility enhancement. Acknowledgements This work was supported by JSPS KAKENHI Grant Number 22H00208, Japan. A part of this work was con-ducted at Takeda Sentanchi Supercleanroom, The University of Tokyo, supported by "Nanotechnology Platform Program" of MEXT, Japan, Grant Number JPMXP09F-20-UT-0007.

Plasma power effect on crystallinity and density of AlN films deposited by plasma enhanced atomic layer deposition

Aluminum nitride (AlN) film is a promising material which is used in various fields. In this study, AlN films with different plasma powers were grown by remote plasma atomic layer deposition. Saturation experiments have been applied in the plasma power between 1000 and 3000 W. The influence of plasma power on preferential orientation, chemical, optical, and electrical properties of AlN films are investigated. AlN films displayed multiphase hexagonal wurtzite crystal structure with (002) preferential orientation for higher plasma power, while the predominant orientation shifted toward (100) at lower plasma power. The optical emission spectroscopy analyses show that NH and NH2 radicals conduce to the deposition of AlN films and H radicals selectively dissociate Al–OH bonds which were on AlN film surface and etch deposition films. Atomic force microscopy measurements show that the 1500 W prepared AlN film with smallest surface roughness may be related to the relatively smaller concomitant crystal grains of (100) and (002). X-ray photoelectron spectroscopy investigation presents that oxygen content decreases as the plasma power increases. The obtained maximum value of dielectric constant and breakdown electrical field of AlN film deposited at 3000 W is 8.23 and 5.42 MV/cm, respectively.

Effect on passivation mechanism and properties of HfO2/crystalline-Si interface under different annealing atmosphere

Hafnium oxide (HfO2) thin film has received tremendous research interests as a passivation layer of crystalline silicon (c-Si) due to its thermal stability and positive fixed charges. HfO2 films were prepared both on P-type and N-type polished c-Si via a remote plasma atomic layer deposition process. Post annealing was carried out in oxygen, atmosphere (Air) and nitrogen (N2) at temperature of 500 °C. Electrical characterization was done through a regular metal-insulator-semiconductor structure and capacitance-voltage measurements. The oxide fixed charge (Qf) and density of interface traps (Dit) between HfO2 and c-Si were extracted. Qf and Dit reveal the potential of HfO2 for field effect and chemical passivation, respectively. Effective lifetime measurements by microwave photoconductivity decay in Si wafers passivated with HfO2 were applied to characterize surface recombination velocity to directly evaluate the overall passivation quality. The impacts of post-annealing gas ambient on passivation qualities on Si by HfO2 thin films are systematically studied. The results show that N2-annealed sample possesses the highest Qf of 1.73 × 1012 cm−2 and therefore provides the best field effect passivation. Air-annealed sample has lowest Dit of 1.0 × 1012 eV−1cm−2 and therefore provides the best chemical passivation. Air-annealed sample possesses the highest effective lifetime of 290 μs at injection level of 1 × 1015 cm−3, which means that good passivation was obtained for N-type Si wafer passivated with HfO2 after annealing in Air.

Atomic Layer Deposition of Ultra-Thin Crystalline Electron Channels for Heterointerface Polarization at Two-Dimensional Metal-Semiconductor Heterojunctions

Atomic layer deposition (ALD) has emerged as a promising technology for the development of the next generation of low-power semiconductor electronics. The wafer-scaled growth of two-dimensional (2D) crystalline nanostructures is a fundamental step toward the development of advanced nanofabrication technologies. Ga2O3 is an ultra-wide bandgap metal oxide semiconductor for application in electronic devices. The polymorphous Ga2O3 with its unique electronic characteristics and doping capabilities is a functional option for heterointerface engineering at metal-semiconductor 2D heterojunctions for application in nanofabrication technology. Plasma-enhanced atomic layer deposition (PE-ALD) enabled the deposition of ultra-thin nanostructures at low-growth temperatures. The present study used the PE-ALD process for the deposition of atomically thin crystalline ß-Ga2O3 films for heterointerface engineering at 2D metal-semiconductor heterojunctions. Via the control of plasma gas composition and ALD temperature, the wafer-scaled deposition of ~5.0 nm thick crystalline ß-Ga2O3 at Au/Ga2O3-TiO2 heterointerfaces was achieved. Material characterization techniques showed the effects of plasma composition and ALD temperature on the properties and structure of Ga2O3 films. The following study on the electronic characteristics of Au/Ga2O3-TiO2 2D heterojunctions confirmed the tunability of this metal/semiconductor polarized junction, which works as functional electron channel layer developed based on tunable p-n junctions at 2D metal/semiconductor interfaces.

Preparation of Remote Plasma Atomic Layer-Deposited HfO2 Thin Films with High Charge Trapping Densities and Their Application in Nonvolatile Memory Devices.

Optimization of equipment structure and process conditions is essential to obtain thin films with the required properties, such as film thickness, trapped charge density, leakage current, and memory characteristics, that ensure reliability of the corresponding device. In this study, we fabricated metal-insulator-semiconductor (MIS) structure capacitors using HfO2 thin films separately deposited by remote plasma (RP) atomic layer deposition (ALD) and direct-plasma (DP) ALD and determined the optimal process temperature by measuring the leakage current and breakdown strength as functions of process temperature. Additionally, we analyzed the effects of the plasma application method on the charge trapping properties of HfO2 thin films and properties of the interface between Si and HfO2. Subsequently, we synthesized charge-trapping memory (CTM) devices utilizing the deposited thin films as charge-trapping layers (CTLs) and evaluated their memory properties. The results indicated excellent memory window characteristics of the RP-HfO2 MIS capacitors compared to those of the DP-HfO2 MIS capacitors. Moreover, the memory characteristics of the RP-HfO2 CTM devices were outstanding as compared to those of the DP-HfO2 CTM devices. In conclusion, the methodology proposed herein can be useful for future implementations of multiple levels of charge-storage nonvolatile memories or synaptic devices that require many states.

Synthesis of TiO2/Al2O3 Double-Layer Inverse Opal by Thermal and Plasma-Assisted Atomic Layer Deposition for Photocatalytic Applications.

In comparison to conventional nano-infiltration approaches, the atomic layer deposition (ALD) technology exhibits greater potential in the fabrication of inverse opals (IOs) for photocatalysts. In this study, TiO2 IO and ultra-thin films of Al2O3 on IO were successfully deposited using thermal or plasma-assisted ALD and vertical layer deposition from a polystyrene (PS) opal template. SEM/EDX, XRD, Raman, TG/DTG/DTA-MS, PL spectroscopy, and UV Vis spectroscopy were used for the characterization of the nanocomposites. The results showed that the highly ordered opal crystal microstructure had a face-centered cubic (FCC) orientation. The proposed annealing temperature efficiently removed the template, leaving the anatase phase IO, which provided a small contraction in the spheres. In comparison to TiO2/Al2O3 plasma ALD, TiO2/Al2O3 thermal ALD has a better interfacial charge interaction of photoexcited electron-hole pairs in the valence band hole to restrain recombination, resulting in a broad spectrum with a peak in the green region. This was demonstrated by PL. Strong absorption bands were also found in the UV regions, including increased absorption due to slow photons and a narrow optical band gap in the visible region. The results from the photocatalytic activity of the samples show decolorization rates of 35.4%, 24.7%, and 14.8%, for TiO2, TiO2/Al2O3 thermal, and TiO2/Al2O3 plasma IO ALD samples, respectively. Our results showed that ultra-thin amorphous ALD-grown Al2O3 layers have considerable photocatalytic activity. The Al2O3 thin film grown by thermal ALD has a more ordered structure compared to the one prepared by plasma ALD, which explains its higher photocatalytic activity. The declined photocatalytic activity of the combined layers was observed due to the reduced electron tunneling effect resulting from the thinness of Al2O3.

Characteristics of Hf0.5Zr0.5O2 Thin Films Prepared by Direct and Remote Plasma Atomic Layer Deposition for Application to Ferroelectric Memory

Hf0.5Zr0.5O2 (HZO) thin film exhibits ferroelectric properties and is presumed to be suitable for use in next-generation memory devices because of its compatibility with the complementary metal-oxide-semiconductor (CMOS) process. This study examined the physical and electrical properties of HZO thin films deposited by two plasma-enhanced atomic layer deposition (PEALD) methods- direct plasma atomic layer deposition (DPALD) and remote plasma atomic layer deposition (RPALD)-and the effects of plasma application on the properties of HZO thin films. The initial conditions for HZO thin film deposition, depending on the RPALD deposition temperature, were established based on previous research on HZO thin films deposited by the DPALD method. The results show that as the measurement temperature increases, the electric properties of DPALD HZO quickly deteriorate; however, the RPALD HZO thin film exhibited excellent fatigue endurance at a measurement temperature of 60 °C or less. HZO thin films deposited by the DPALD and RPALD methods exhibited relatively good remanent polarization and fatigue endurance, respectively. These results confirm the applicability of the HZO thin films deposited by the RPALD method as ferroelectric memory devices.

On the limitations of thermal atomic layer deposition of InN using ammonia

Chemical vapor deposition of indium nitride (InN) is severely limited by the low thermal stability of the material, and, thus, low-temperature deposition processes such as atomic layer deposition (ALD) are needed to deposit InN films. The two chemically and structurally closely related materials—aluminum nitride and gallium nitride (GaN)—can be deposited by both plasma and thermal ALD, with ammonia (NH3) as a nitrogen precursor in thermal processes. InN, however, can only be deposited using plasma ALD, indicating that there might be a limitation to thermal ALD with NH3 for InN. We use quantum-chemical density functional theory calculations to compare the adsorption process of NH3 on GaN and InN to investigate if differences in the process could account for the lack of thermal ALD of InN. Our findings show a similar reactive adsorption mechanism on both materials, in which NH3 could adsorb onto a vacant site left by a desorbing methyl group from the surfaces. The difference in energy barrier for this adsorption indicates that the process is many magnitudes slower on InN compared to GaN. Slow kinetics would hinder NH3 from reactively adsorbing onto InN in the timeframe of the ALD growth process and, thus, limit the availability of a thermal ALD process.

Effect of substrate temperature on properties of AlN buffer layer grown by remote plasma ALD

Aluminum nitride (AlN) thin film has considerable properties, which makes it advantages for a variety of applications. AlN films were prepared by remote plasma atomic layer deposition (RP-ALD) with the growth temperature of 100 to 450 °C. The properties of AlN films with various growth temperatures were studied systematically. In addition, AlN/GaN layers deposited on sapphire (Al2O3) substrates were also investigated. The AlN/GaN interfaces and AlN/Al2O3 interfaces characteristics were analyzed. The optical property of GaN films prepared on sapphire substrates with and without AlN buffer layer were identified by photoluminescence measurement. The experiment result shows that crystal AlN films became to present at 250 °C with a hexagonal wurtzite structure. X-ray photoelectron spectroscopy investigation shows that AlN films contain Al-O, Al-O-N complexes and Al-Al metallic aluminum bonds except the main Al-N bond confirmed by high resolution Al 2p and N 1 s spectra. High-resolution transmission electron microscopy measurement reveals sharp interfaces of AlN/Al2O3 and AlN/GaN. The obtained lowest lattice mismatch of AlN/Al2O3 and AlN/GaN are 11.0% and 2.1%, respectively. Photoluminescence measurement further confirms that AlN buffer layer enhances the quality of GaN grown on sapphire substrates. High quality AlN/GaN layers prepared by RP-ALD provides a promising pathway towards high quality GaN-based devices.

Thermomechanical properties of aluminum oxide thin films made by atomic layer deposition

In microelectromechanical system devices, thin films experience thermal processing at temperatures some cases exceeding the growth or deposition temperature of the film. In the case of the thin film grown by atomic layer deposition (ALD) at relatively low temperatures, post-ALD thermal processing or high device operation temperature might cause performance issues at device level or even device failure. In this work, residual stress and the role of intrinsic stress in ALD Al2O3 films grown from Me3Al and H2O, O3, or O2 (plasma ALD) were studied via post-ALD thermal processing. Thermal expansion coefficient was determined using thermal cycling and the double substrate method. For some samples, post-ALD thermal annealing was done in nitrogen at 300, 450, 700, or 900 °C. Selected samples were also studied for crystallinity, composition, and optical properties. Samples that were thermally annealed at 900 °C had increased residual stress value (1400–1600 MPa) upon formation of denser Al2O3 phase. The thermal expansion coefficient varied somewhat between Al2O3 made using different oxygen precursors. For thermal-Al2O3, intrinsic stress decreased with increasing growth temperature. ALD Al2O3 grown with plasma process had the lowest intrinsic stress. The results show that ALD Al2O3 grown at 200 and 300 °C is suitable for applications, where films are exposed to post-ALD thermal processing even at temperature of 700 °C without a major change in optical properties or residual stress.

Bipolar Resistive Switching in Hafnium Oxide-Based Nanostructures with and without Nickel Nanoparticles

As research into additives and intentionally introduced impurities in dielectric thin film for enhancing the resistive switching based random access memories (RRAM) continues to gain momentum, the aim of the study was to evaluate the effects of chemically presynthesised Ni nanoparticles (NPs) embedded in a dielectric layer to the overall structure and resistive switching properties. HfO2-based thin films embedded with Ni NPs were produced by atomic layer deposition (ALD) from tetrakis(ethylmethylamino)hafnium (TEMAH) and the O2 plasma ALD process onto a TiN/Si substrate. The Ni NPs were separately synthesised through a continuous flow chemistry process and dispersed on the dielectric layer between the two stages of preparing the HfO2 layer. The nanodevices’ morphology and composition were analysed with physical characterisation methods and were found to be uniformly dispersed across the sample, within an amorphous HfO2 layer deposited around them. When comparing the resistive switching properties of otherwise identical samples with and without Ni NPs, the ILRS/IHRS ratio rose from around a 4 to 9 at 0.2 V reading voltage, the switching voltage dropped from ~2 V to ~1.5 V, and a distinct increase in the endurance characteristics could be seen with the addition of the nanoparticles.

ALD and PEALD deposition of HfO2 and its effects on the nature of oxygen vacancies

The high-k materials are essential in thin-film transistors. A well-controlled thin film deposition that produces less electronic defects induced by charged vacancies is highly desirable for avoiding high leakage current and and providing an exceptional dielectric strength. This work addresses the use of atomic layer deposition (ALD), plasma-enhanced ALD (PEALD), and its variants to produce low-defective HfO2. The X-ray photoelectron spectroscopy (XPS) and Capacitance-Voltage (C-V) analysis revealed that the thermal ALD (TALD) samples produce electron emissions of ∼ 1 eV above the valence band maximum, negative flat band voltage shift of 1.51 V, and low dielectric breakdown strength (4.37 MV/cm). These properties confirm the high density of positive oxygen vacancies (1.2 × 1013 cm−2) acting as shallow traps, despite its O/Hf ratio (1.84) being higher than the Direct Plasma ALD (DPALD) sample. On the other hand, PEALD induces the formation of neutral vacancies promoted by the electric field of the plasma sheath. These defects are less detrimental to the capacitor performance as their flat band shifts are −0.25 and 1.01 V for remote plasma ALD (RPALD) and DPALD samples. Their dielectric breakdown strength increases by ∼ 1 MV/cm, and a reduced current density by 3 orders of magnitude less than TALD samples. The O/Hf ratio in DPALD samples is 1.80, confirming the benefits of using PEALD approaches.

Review of Cobalt Oxide (CoO) thin films prepared by various techniques

It is reviewed that for fulfilling the demands of portable devices like phones, watches, low-cost energy storage system etc, cobalt oxides and their composite play a very promising role. Recently, nanotechnology has great application toward gay to-day life. This paper reviews the various deposition techniques for cobalt thin films such as chemical spray pyrolysis, atomic layer deposition, metal organic chemical vapor deposition, plasma atomic layer deposition, facile spray pyrolysis technique, spin coating techniques and reactive pulsed magnetron sputtering. Cobalt oxides are semiconductors and this material is very useful in electronic, optical and catalytic applications. In this review paper, various methods for formation of thin films were discussed. Number of properties such as structural, electrochemical and morphological of these prepared films was studied. It was observed that annealing temperature has great intense effect on thickness of films. This paper also discussed the characterization technique carried by researcher such as UV-spectroscopy, Fourier transform infrared spectroscopy, scanning electron microscopy, transmission electron microscopy, atomic force microscopy and high-resolution scanning electron microscopy (HRSEM). It was concluded that cobalt metallic films have great contribution toward new technological applications.

Growth and characterization of Si-doped Ga2O3 thin films by remote plasma atomic layer deposition: Toward UVC-LED application

Si-doped Ga2O3 films were prepared on quartz and silicon substrates using remote plasma atomic layer deposition with trimethylgallium, Bis(diethylamino)silane and O2 plasma as the precursors. Different Si-doped concentration in films were obtained by adjusting the numbers of SiO2 circulation ratio. The effect of Si-doped concentration from 0 to 20% on the qualities of the Ga2O3 thin films were studied. The experimental results showed that Ga2O3 thin film growth per cycle increases slightly with the various cycle ratio at the same total cycles of about 600. Field emission scanning electron microscopy shows that the Ga2O3 films have very smooth surface. The spectroscopic ellipsometry tests showed that the refractive index of the Si-doped Ga2O3 thin films decreases monotonically with the doping level increases. The transmittances of all the doped Ga2O3 films are exceed 90% in the visible region. The (400) preferred orientation Ga2O3 thin films were obtained after annealing at 900 °C in N2 atmosphere. Moreover, the x-ray photoelectron spectroscopy investigation indicates that the doped Ga2O3 thin films is Ga-rich with the states of Ga3+ and Ga1+. High resolution transmission electron microscopy mapping measurement shows that the Si composition in the Ga2O3 thin films is uniform. Hall effect measurements demonstrated that the carrier concentration and mobility of the doped Ga2O3 films increase while the resistivity of the films decreases as the Si-doped concentration increases. The results of Si-doped Ga2O3 thin film with 20% cycle ratio shows high transmittance of 93% at 280 nm wavelength and low resistivity of 3.41 Ω·cm. Optical simulations show the potential for development of the Si-doped Ga2O3 films as the back electrode in the application of the ultraviolet C light-emitting diode.

Enhanced thermoelectric performance of defect engineered monolayer graphene

We propose a method of improving the thermoelectric properties of graphene using defect engineering through plasma irradiation and atomic layer deposition (ALD). We intentionally created atomic blemishes in graphene by oxygen plasma treatment and subsequently healed the atomistically defective places using Pt-ALD. After healing, the thermal conductivity of the initially defective graphene increased slightly, while the electrical conductivity and the square of the Seebeck coefficient increased pronouncedly. The thermoelectric figure of merit of the Pt-ALD treated graphene was measured to be over 4.8 times higher than the values reported in the literature. We expect that our study could provide a useful guideline for the development of graphene-based thermoelectric devices.

Radical-Induced Effect on PEALD SiO2 Films by Applying Positive DC Bias

Multiple patterning technology has become an essential process. In the commonly used self-aligned multiple patterning process, the spacer should be dense at low temperatures and have a high elastic modulus. To meet these conditions, many thin-film deposition methods, such as plasma-enhanced atomic layer deposition, have been studied. We investigated remote plasma atomic layer deposition (RPALD) technology with a DC positive bias. After applying bias voltage to the plasma region, changes in the plasma properties, such as density and flux, were examined and applied to SiO2 deposition. When DC positive bias was applied, the sheath voltage decreased, causing an increase in the radical density, which contributed to the surface reaction. In an elastic recoil detection analysis, the application of 200 V reduced the hydrogen content of the film from 11.89% to 10.07% compared with no bias; an increase in SiO2 film density from 2.32 to 2.35 g cm−3 was also measured. The elastic modulus and hardness were shown to increase through a nano-indenter analysis and surface roughness improved with the suppression of energetic ions impinging on the film surface. Thus, the application of DC positive bias during the RPALD process effectively improved the physical, chemical, and mechanical properties of SiO2 film.

HBN Flake Embedded Al2O3 Thin Film for Flexible Moisture Barrier.

Due to the vulnerability of organic optoelectronic devices to moisture and oxygen, thin-film moisture barriers have played a critical role in improving the lifetime of the devices. Here, we propose a hexagonal boron nitride (hBN) embedded Al2O3 thin film as a flexible moisture barrier. After layer-by-layer (LBL) staking of polymer and hBN flake composite layer, Al2O3 was deposited on the nano-laminate template by spatial plasma atomic layer deposition (PEALD). Because the hBN flakes in Al2O3 thin film increase the diffusion path of moisture, the composite layer has a low water vapor transmission ratio (WVTR) value of 1.8 × 10−4 g/m2 day. Furthermore, as embedded hBN flakes restrict crack propagation, the composite film exhibits high mechanical stability in repeated 3 mm bending radius fatigue tests.

(Invited) Role of Low-Energy Ions during Plasma-Enhanced Atomic Layer Deposition

This contribution will discuss the role and impact of ions during plasma-enhanced atomic layer deposition (ALD), in the context of the latest trends in nanoelectronic device fabrication. Due to the ongoing downscaling of semiconductor device structures, atomic-scale processing techniques such as plasma ALD are becoming increasingly important and more widely applied. Detailed insight into the role of ions is essential, now more than ever, for further advancing the atomic-level precision that plasma ALD offers.Among others, it will be presented that even ions with a low energy of <20 eV, as typical when using a grounded substrate and a remote plasma source, can considerably influence plasma ALD processes. This will be illustrated using plasma ALD of SiO2 and TiO2 as industry-relevant case studies. Specifically, it is observed that (low-energy) ions contribute to the film quality of SiO2,1 can induce crystallization during plasma ALD of TiO2,2 and can alter the growth per cycle by a factor of up to ~2 (for both SiO2 and TiO2). These effects can have important consequences for applications, for instance on the film conformality obtained on 3D nanostructures.Furthermore, the mechanisms governing the influence of ions on an elementary level will be discussed. An important topic here is the combined effect of ion energy, ion flux and plasma exposure time. These parameters can all have a different impact, depending on the plasma and material system. For plasma ALD of SiO2 and TiO2 the combined effect can be universally described by the ion energy dose (i.e., ion energy × flux × exposure time),3 where a minimal effect is obtained when supplying a dose of <1 eV nm-2 cycle-1, or a strong effect when supplying a dose of >100 eV nm-2 cycle-1.1,2 In conclusion, general insights into the role of ions during plasma ALD will be presented, which are particularly important for advancing the level of control over film thickness and material properties in the fabrication of (next-generation) nanoelectronics. Arts et al., Appl. Phys. Lett. 117, 031602 (2020).Arts et al., Impact of ions on film conformality and crystallinity during plasma-assisted atomic layer deposition of TiO2 (to be published).Faraz et al., Plasma Sources Sci. Technol. 28, 024002 (2019). Figure 1

On the dynamics in chemical vapor deposition of InN

Epitaxial nanometer-thin indium nitride (InN) films are considered promising active layers in various device applications but remain challenging to deposit. We compare the morphological evolution and characterizations of InN films with various growth conditions in chemical vapor deposition (CVD) by both a plasma atomic layer deposition (ALD) approach and a conventional metalorganic CVD approach. Our results show that a time-resolved precursor supply is highly beneficial for deposition of smooth and continuous InN nanometer-thin films. The time for purging the reactor between the precursor pulses and low deposition temperature are key factors to achieve homogeneous InN. The gas exchange dynamics of the reactor is further studied using computational fluid dynamics. According to our study, 320 °C is found to be the upper temperature where the dynamics of the deposition chemistry can be controlled to involve only surface reactions with surface species. The results highlight the promising role of the ALD technique in realizing electronic devices based on nanometer-thin InN layers.